Doctoral student in SiC bipolar devices for power electronics

Project description

Third-cycle subject: Information and Communication Technology

The position will contribute to cutting-edge research on Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices for next-generation power electronics applications. These devices are crucial for improving energy efficiency, performance, and reliability in industries such as renewable energy, electric vehicles, and industrial automation. The position involves fabrication and characterization of new devices in KTHs Electrum Laboratory () with a focus on semiconductor process technology to enhance device performance. The PhD will be part of an internationally recognized SiC research group () and the EU project WBG Pilot line ().

Supervision: Prof. Per-Erik Hellströmis proposed to supervise the doctoral student. Decisions are made on admission

Admission requirements

To be admitted to...